Stress memorization technique for strain coupling enhancement in bulk finfet device

ABSTRACT

A method for forming strained fins includes etching trenches in a bulk substrate to form fins, filling the trenches with a dielectric fill and recessing the dielectric fill into the trenches to form shallow trench isolation regions. The fins are etched above the shallow trench isolation regions to form a staircase fin structure with narrow top portions of the fins. Gate structures are formed over the top portions of the fins. Raised source ad drain regions are epitaxially grown on opposite sides of the gate structure. A pre-morphization implant is performed to generate defects in the substrate to couple strain into the top portions of the fins.

BACKGROUND Technical Field

The present invention relates to semiconductor devices and processing,and more particularly to a staircase fin field effect transistor(finFET) that preserves channel region strain.

Description of the Related Art

A stress memorization technique (SMT) has demonstrated a drive currentbenefit on planar device structures for n-type field effect transistors(NFETs). In finFET devices however, due to the nature of thethree-dimensional geometrical constraint, the implementation of SMT hasbecome even more challenging. The fins tend to be isolated from largerbulk semiconductor materials, and their small size makes it verydifficult to sustain strain in the fins.

SUMMARY

A method for forming strained fins includes etching trenches in a bulksubstrate to form fins, filling the trenches with a dielectric fill andrecessing the dielectric fill into the trenches to form shallow trenchisolation regions. The fins are etched above the shallow trenchisolation regions to form a staircase fin structure with narrow topportions of the fins. Gate structures are formed over the top portionsof the fins. Raised source ad drain regions are epitaxially grown onopposite sides of the gate structure. A pre-amorphization implant isperformed to generate defects in the substrate to couple strain into thetop portions of the fins.

Another method for forming strained fins includes forming a firstdielectric layer on a bulk substrate; forming a second dielectric layeron the first dielectric layer; forming mandrels with sidewall spacers;removing the mandrels; etching the second dielectric layer and the firstdielectric layer in accordance with the sidewall spacers to form an etchmask; etching trenches in the bulk substrate to form fins using the etchmask; filling the trenches with a dielectric fill; recessing thedielectric fill into the trenches to form shallow trench isolationregions; etching the fins above the shallow trench isolation regions toform a staircase fin structure with narrow top portions of the fins;forming gate structures over the top portions of the fins; epitaxiallygrowing raised source ad drain regions on opposite sides of the gatestructure; performing a pre-amorphization implant to generate defects inthe substrate to induce strain and couple the strain into the topportions of the fins; and performing a stress memorization technique(SMT) anneal to propagate the strain after the pre-amorphization implantthrough the fins from the substrate.

A semiconductor device includes a bulk substrate having staircase finstructures including a larger base portion below a shallow trenchisolation region and a narrower top portion above the shallow trenchisolation region. A defect is introduced into the substrate by apre-amorphization implant to couple strain into the top portion of thefins. A gate structure is formed transversely over the top portion ofthe fins, and source and drain regions are formed on the top portion ofthe fins on opposite sides of the gate structure.

These and other features and advantages will become apparent from thefollowing detailed description of illustrative embodiments thereof,which is to be read in connection with the accompanying drawings.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

The disclosure will provide details in the following description ofpreferred embodiments with reference to the following figures wherein:

FIG. 1 is a cross-sectional view of a partially fabricated semiconductordevice having mandrels and a spacer layer formed on the mandrels forforming an etch mask in accordance with the present principles;

FIG. 2 is a cross-sectional view of the semiconductor device of FIG. 1having sidewall spacers formed on the mandrels for forming the etch maskin accordance with the present principles;

FIG. 3 is a cross-sectional view of the semiconductor device of FIG. 2having the mandrels removed leaving the sidewall spacers in accordancewith the present principles;

FIG. 4 is a cross-sectional view of the semiconductor device of FIG. 3having dielectric layers etched in accordance with the spacers to formthe etch mask for etching a bulk substrate in accordance with thepresent principles;

FIG. 5 is a cross-sectional view of the semiconductor device of FIG. 4having trenches etched in the substrate and filled with a dielectricfill in accordance with the present principles;

FIG. 6 is a cross-sectional view of the semiconductor device of FIG. 5having the dielectric fill planarized to a top of the substrate inaccordance with the present principles;

FIG. 7 is a cross-sectional view of the semiconductor device of FIG. 6having the dielectric fill recessed into the trenches to form shallowtrench isolation (STI) regions in accordance with the presentprinciples;

FIG. 8 is a cross-sectional view of the semiconductor device of FIG. 7having tops of fins etched to form staircase fin structures inaccordance with the present principles;

FIG. 9 is a perspective view showing a staircase structure with STIregions in accordance with one illustrative embodiment;

FIG. 10 is a cross-sectional view taken at section line A-A of FIG. 9showing the staircase structure with STI regions in accordance with oneillustrative embodiment;

FIG. 11 is a cross-sectional view taken at section line B-B of FIG. 9showing the staircase structure with STI regions in accordance with oneillustrative embodiment;

FIG. 12 is a perspective view showing a gate structure formed over thestaircase structure in accordance with one illustrative embodiment;

FIG. 13 is a cross-sectional view taken at section line A-A of FIG. 9showing the gate structure of FIG. 12 in accordance with oneillustrative embodiment;

FIG. 14 is a cross-sectional view taken at section line B-B of FIG. 9showing the gate structure of FIG. 12 in accordance with oneillustrative embodiment;

FIG. 15 is a perspective view showing the gate structure having spacersformed thereon in accordance with one illustrative embodiment;

FIG. 16 is a cross-sectional view taken at section line A-A of FIG. 9showing the gate structure of FIG. 15 with spacers in accordance withone illustrative embodiment;

FIG. 17 is a cross-sectional view taken at section line B-B of FIG. 9showing the gate structure of FIG. 15 with spacers in accordance withone illustrative embodiment;

FIG. 18 is a perspective view showing raised source and drain regionsformed in accordance with one illustrative embodiment;

FIG. 19 is a cross-sectional view taken at section line A-A of FIG. 9showing the raised source and drain regions of FIG. 18 in accordancewith one illustrative embodiment;

FIG. 20 is a cross-sectional view taken at section line B-B of FIG. 9showing the raised source and drain regions of FIG. 18 in accordancewith one illustrative embodiment;

FIG. 21 is a perspective view showing defects implanted in the substratein accordance with one illustrative embodiment;

FIG. 22 is a cross-sectional view taken at section line A-A of FIG. 9showing defects implanted in the substrate of FIG. 21 in accordance withone illustrative embodiment;

FIG. 23 is a cross-sectional view taken at section line B-B of FIG. 9showing defects implanted in the substrate of FIG. 21 in accordance withone illustrative embodiment; and

FIG. 24 is a block/flow diagram showing a method for forming strainedfins in accordance with illustrative embodiments.

DETAILED DESCRIPTION

In accordance with the present principles, staircase fin structures andmethods for fabricating these structures are provided. In oneembodiment, the structure includes a staircase fin structure to enhancestrain coupling. An enlarged area along a longitudinal direction of thefin facilitates the coupling of shear strain generated by a dislocationlocated at a bottom portion of the fin (beneath shallow trench isolation(STI)).

In useful embodiments, a bulk semiconductor substrate is employed tofaun staircase fins. Fins are patterned using a first mask, followed bya masking of the base of the fin. Then, an additional etch is performedto reduce the thickness of the fin on a top portion. While the fin onthe top portion remains thin, the stress/strain from the substrateremains since the fin is integrally formed in or with the substrate.

It is to be understood that the present invention will be described interms of a given illustrative architecture; however, otherarchitectures, structures, substrate materials and process features andsteps may be varied within the scope of the present invention.

It will also be understood that when an element such as a layer, regionor substrate is referred to as being “on” or “over” another element, itcan be directly on the other element or intervening elements may also bepresent. In contrast, when an element is referred to as being “directlyon” or “directly over” another element, there are no interveningelements present. It will also be understood that when an element isreferred to as being “connected” or “coupled” to another element, it canbe directly connected or coupled to the other element or interveningelements may be present. In contrast, when an element is referred to asbeing “directly connected” or “directly coupled” to another element,there are no intervening elements present.

The present embodiments may include a design for an integrated circuitchip, which may be created in a graphical computer programming language,and stored in a computer storage medium (such as a disk, tape, physicalhard drive, or virtual hard drive such as in a storage access network).If the designer does not fabricate chips or the photolithographic masksused to fabricate chips, the designer may transmit the resulting designby physical means (e.g., by providing a copy of the storage mediumstoring the design) or electronically (e.g., through the Internet) tosuch entities, directly or indirectly. The stored design is thenconverted into the appropriate format (e.g., GDSII) for the fabricationof photolithographic masks, which typically include multiple copies ofthe chip design in question that are to be formed on a wafer. Thephotolithographic masks are utilized to define areas of the wafer(and/or the layers thereon) to be etched or otherwise processed.

Methods as described herein may be used in the fabrication of integratedcircuit chips. The resulting integrated circuit chips can be distributedby the fabricator in raw wafer form (that is, as a single wafer that hasmultiple unpackaged chips), as a bare die, or in a packaged form. In thelatter case the chip is mounted in a single chip package (such as aplastic carrier, with leads that are affixed to a motherboard or otherhigher level carrier) or in a multichip package (such as a ceramiccarrier that has either or both surface interconnections or buriedinterconnections). In any case the chip is then integrated with otherchips, discrete circuit elements, and/or other signal processing devicesas part of either (a) an intermediate product, such as a motherboard, or(b) an end product. The end product can be any product that includesintegrated circuit chips, ranging from toys and other low-endapplications to advanced computer products having a display, a keyboardor other input device, and a central processor.

It should be understood that material compounds will be described interms of listed elements, e.g., SiGe. These compounds include differentproportions of the elements within the compound, e.g., SiGe includesSi_(x)Ge_(1−x) where x is less than or equal to 1, etc. In addition,other elements may be included in the compound and still function inaccordance with the present principles. The compounds with additionalelements will be referred to herein as alloys.

Reference in the specification to “one embodiment” or “an embodiment” ofthe present principles, as well as other variations thereof, means thata particular feature, structure, characteristic, and so forth describedin connection with the embodiment is included in at least one embodimentof the present principles. Thus, the appearances of the phrase “in oneembodiment” or “in an embodiment”, as well any other variations,appearing in various places throughout the specification are notnecessarily all referring to the same embodiment.

It is to be appreciated that the use of any of the following “/”,“and/or”, and “at least one of”, for example, in the cases of “A/B”, “Aand/or B” and “at least one of A and B”, is intended to encompass theselection of the first listed option (A) only, or the selection of thesecond listed option (B) only, or the selection of both options (A andB). As a further example, in the cases of “A, B, and/or C” and “at leastone of A, B, and C”, such phrasing is intended to encompass theselection of the first listed option (A) only, or the selection of thesecond listed option (B) only, or the selection of the third listedoption (C) only, or the selection of the first and the second listedoptions (A and B) only, or the selection of the first and third listedoptions (A and C) only, or the selection of the second and third listedoptions (B and C) only, or the selection of all three options (A and Band C). This may be extended, as readily apparent by one of ordinaryskill in this and related arts, for as many items listed.

Referring now to the drawings in which like numerals represent the sameor similar elements and initially to FIG. 1, a partially fabricatedsemiconductor device 10 is shown in accordance with the presentprinciples. The device 10 includes a bulk substrate 12, preferablymonocrystalline Si although other substrate materials may be employed.The bulk substrate 12 is patterned and etched to form fins therein. Thefin patterning process may include a direct lithographic patterningprocess or a spacer imaging transfer (SIT) patterning process to etchportions of the substrate 12. The present embodiment employs a SITprocess.

The substrate 12 may include a pad (oxide) layer 13, which is arelatively thin oxide formed on the substrate 12. A first dielectriclayer 14 is formed on the pad layer 13. In one embodiment, the firstdielectric layer 14 includes a nitride. The first dielectric layer 16may include a thickness of about 40 nm. A second dielectric layer 16 isdeposited on the first dielectric layer 14. The second dielectric layer16 may include an undoped silicate glass (USG) layer or the like. Thesecond dielectric layer 16 may include a thickness of about 30 nm.

Mandrels 18 are formed on the second dielectric layer 16 by depositing asacrificial layer and patterning the sacrificial layer in accordancewith a lithographic mask (not shown) using a reactive ion etch (RIE)process. The sacrificial layer may include amorphous silicon to formmandrels 18. A conformal layer 20 is deposited over the mandrels 18. Theconformal layer 20 may include an oxide deposition employed for forminga spacer image transfer (SIT) spacer 22 in FIG. 2.

Referring to FIG. 2, a SIT spacer etch is performed on the conformallayer 20 to form spacers 22 on the mandrels 18. The spacers 22 mayprovide a fin pitch of, e.g., about 42 nm with spacer thickness afterpull down of the mandrels 18 being controlled at about 10 nm. Otherpitches and spacer thicknesses are also contemplated. The etch stops onthe second dielectric layer 16 (e.g., the USG film) above the seconddielectric layer 14.

Referring to FIG. 3, the mandrels 18 are removed (mandrel pull) by aselective etch process to remove the mandrels with respect to thespacers 22 and the second dielectric layer 16. An organic dielectriclayer (ODL) 24 is deposited and patterned to keep areas without finsintact during the subsequent processing.

Referring to FIG. 4, a RIE is performed to etch the layers 14 and 16 toform a mask pattern 26 for etching fins into the substrate 12. Alithographic mask may be employed to protect the ODL 24 during the RIE.In another embodiment, the ODL 24 is made thick enough to withstand theRIE.

Referring to FIG. 5, another RIE process is performed to carry thepattern 26 into the substrate 12 to etch trenches 28 to form fins 30. Inone example, a targeted depth of the fin RIE is about 100 nm from thetop of the fin 30.

The ODL 24 protects an area 34 where no fins are formed. Area 34 may beemployed for forming planar devices such as electrostatic discharge(ESD) devices, passive devices or the like. After the fin etch, area 34is exposed by removing the ODL 24 and layers 14 and 16. A dielectricfill 32 is deposited to form a shallow trench isolation (STI) to fillthe trenches 28 and cover the substrate 12. The dielectric fill 32 mayinclude a high aspect ratio process (HARP) oxide 32 (TEOS), althoughother materials and processes may be employed.

Referring to FIG. 6, the dielectric fill 32 is etched back followed by achemical mechanical polish (CMP). This brings the level of thedielectric fill 32 down to tops of the fins 30. The fins 30 are formedin a fin region 36 employed for forming fin field effect transistors(finFETs).

Referring to FIG. 7, a cross-sectional view of the fin region 36 isshown. For simplicity, the fin region 36 shows either an n-type fieldeffect transistor (NFET) region or a p-type field effect transistor(PFET) region. An STI recess process is performed to further recess thedielectric fill 32 to form STI regions 38. In one embodiment, the recessof dielectric fill 32 is performed using, e.g., a SiCoNi etchingchemistry.

Referring to FIG. 8, fin portions 40 below the STI regions 38 areprotected from a fin trimming process. Fin portions 42 above the STIregions 38 are subjected to a controlled oxidation followed by a HF wetstrip to reduce the size of the portion 42 with respect to portion 40.This forms a staircase structure 44 for the fins with the broader basefin portions 40 and the narrower top fin portions 42.

Referring to FIG. 9, a perspective view of a staircase structure 44 withSTI regions 38 is shown in accordance with one illustrative embodiment.The perspective view includes section lines A-A and B-B, which providecross-sections as depicted in FIGS. 10 and 11, respectively.

Referring to FIGS. 10 and 11, cross-sectional views taken at sectionlines A-A and B-B, respectively in FIG. 9 are illustratively shown. Thestaircase structure 44 includes the base portion 40 and the top portion42. In one embodiment, the base portion 40 includes a height of about 50nm above the etched top of the substrate 12. The top portion 42 mayinclude a thickness of about 10 nm and a height of about 30 nm. The baseportion 40 may include a thickness of between about 12 nm to about 20nm. A distance (pitch) between two top portions 42 may be about 32 nm.Other dimensions may also be employed. A transition between the baseportion 40 and the top portion 42 may be abrupt, forming a step betweenthe portions 40 and 42.

Referring to FIG. 12, a perspective view of the staircase structure 44with STI regions 38 is shown having a gate structure 46 formed thereonin accordance with illustrative embodiments. The perspective view usessection lines A-A and B-B of FIG. 9, to provide cross-sectional views asdepicted in FIGS. 13 and 14, respectively. The gate structure 46 isformed by depositing a gate dielectric 48 and a dummy gate/gateconductor 50. The dummy gate 50 may include amorphous silicon or thegate conductor may include a metal material. The dummy gate/gateconductor 50 may be planarized and annealed. The planarization processmay include a CMP process, and the anneal may include a rapid thermalanneal at about 800 degrees C. for about 5 seconds. A hardmask 52 isdeposited on the dummy gate/gate conductor 50 and may include SiN. Thehardmask 52 may be patterned using a lithographic process, and thehardmask 52 will be employed to etch the dummy gate/gate conductor 50and the gate dielectric 48 to form the gate structure 46 by a stacketch.

Referring to FIGS. 13 and 14, cross-sectional views taken at sectionlines A-A and B-B (FIG. 9), respectively from FIG. 12 are illustrativelyshown. The staircase structure 44 includes the gate structure 46transversely disposed relative to the base portion 40 and the topportion 42.

Referring to FIG. 15, a perspective view of the gate structure 46 isshown having sidewall spacers 54 formed thereon in accordance with theillustrative embodiment. The perspective view uses section lines A-A andB-B of FIG. 9, to provide cross-sectional views as depicted in FIGS. 16and 17, respectively.

A dielectric spacer layer is deposited. In useful embodiments, a SiNmaterial or SiBCN material may be employed in a low-k spacer deposition.The spacer layer is etched (e.g., RIE) to remove material fromhorizontal surfaces and fin portions 42 to form spacers 54.

Referring to FIGS. 16 and 17, cross-sectional views taken at sectionlines A-A and B-B (FIG. 9), respectively from FIG. 15 are illustrativelyshown. The gate structure 46 shows spacers 54 formed on the sidewallsthereof.

Referring to FIG. 18, a perspective view shows raised source and drain(RSD) regions 56 formed on the top portions 42 of the staircase finstructures 44 in accordance with the illustrative embodiment. Theperspective view uses section lines A-A and B-B of FIG. 9, to providecross-sectional views as depicted in FIGS. 16 and 17, respectively. RSDregions 56 are epitaxially grown and merged to form a junction andprovide a template for a following stress memorization technique (SMT)process.

Referring to FIGS. 19 and 20, cross-sectional views taken at sectionlines A-A and B-B (FIG. 9), respectively from FIG. 18 are illustrativelyshown.

Referring to FIG. 21, a perspective view shows raised source and drain(RSD) regions 56 formed on the top portions 42 of the staircase finstructures 44 in accordance with the illustrative embodiment. Theperspective view uses section lines A-A and B-B of FIG. 9, to providecross-sectional views as depicted in FIGS. 22 and 23, respectively.

A pre-amorphization implant (PAI) process is performed to implantspecies into the substrate 12. The PAI process may include employinginert materials, e.g., noble gases, such as Ar, He or the like to causedefects 60 in the substrate 12 below the STI 38. In a particularlyuseful embodiment, the PAI process may employ heavy ion implantation,such as, e.g., Ge or Xe, with a dosage in the range of about 1×10¹⁴/cm²to about 5×10¹⁴ at 50-100 keV.

The defects 60 generated beneath the STI 38 provide strain. A SMT annealmay be performed to induce the strain in the crystal of the substrate12. In one embodiment, the anneal is in the N₂ ambient at a temperaturebetween about 500 and about 700 degrees C. for 10-20 minutes. Due to theenlarged fin area in the substrate 12 and carried through the baseportion 40, the strain coupling is enhanced. Performance benefits aregained due to the strained fin portion 42.

Referring to FIG. 24, a method for forming strained fins is shown inaccordance with the present principles. In some alternativeimplementations, the functions noted in the blocks may occur out of theorder noted in the figures. For example, two blocks shown in successionmay, in fact, be executed substantially concurrently, or the blocks maysometimes be executed in the reverse order, depending upon thefunctionality involved. It will also be noted that each block of theblock diagrams and/or flowchart illustration, and combinations of blocksin the block diagrams and/or flowchart illustration, can be implementedby special purpose hardware-based systems that perform the specifiedfunctions or acts or carry out combinations of special purpose hardwareand computer instructions.

In block 102, a first dielectric layer is formed on a bulk substrate.The first dielectric layer may be formed on a pad oxide layer formed onthe bulk substrate. The first dielectric layer may include a nitridematerial. In block 104, a second dielectric layer is formed on the firstdielectric layer. In block 106, mandrels are patterned. In block 108, aspacer layer is deposited over the mandrels and etched to formedsidewall spacers. In block 110, the mandrels are selectively removed. Inblock 112, the second dielectric layer and the first dielectric layerare etched in accordance with the sidewall spacers to form an etch mask.

In block 114, trenches are etched in the bulk substrate to form finsusing the etch mask. In block 115, a planar region is protected, e.g.,for planar devices. The planar region may be protected using an ODL orother material.

In block 116, the trenches are filled with a dielectric fill. Thedielectric fill may include depositing a high aspect ratio process(HARP) oxide into the trenches and over the substrate and planarizingthe HARP oxide to a top of the fins in block 118. In block 120, thedielectric fill is recessed into the trenches to form shallow trenchisolation regions. The dielectric fill may be recessed using a SiCoNietch chemistry, although other etchants may be employed.

In block 122, the fins are etched above the shallow trench isolationregions to form a staircase fin structure with narrow top portions ofthe fins. The etching of the fins above the shallow trench isolationregions may include oxidizing the fins above the shallow trenchisolation regions, and wet etching the fins above the shallow trenchisolation regions in block 124.

In block 126, gate structures are formed over the top portions of thefins. In block 128, raised source and drain regions are epitaxiallygrown on opposite sides of the gate structure. In block 130, apre-amorphization implant is performed to generate defects in thesubstrate to induce strain and couple the strain into the top portionsof the fins. The pre-amorphization implant may include implanting inertspecies into the substrate to cause the defects. The inert species mayinclude nobel gases.

In block 132, a stress memorization technique (SMT) anneal is performedto propagate the strain after the pre-amorphization implant through thefins from the substrate. In block 134, processing continues with theformation of additional structures and components. For example,contacts, interlevel dielectric materials, metallizations, etc.

Having described preferred embodiments stress memorization technique forstrain coupling enhancement in bulk finFET device (which are intended tobe illustrative and not limiting), it is noted that modifications andvariations can be made by persons skilled in the art in light of theabove teachings. It is therefore to be understood that changes may bemade in the particular embodiments disclosed which are within the scopeof the invention as outlined by the appended claims. Having thusdescribed aspects of the invention, with the details and particularityrequired by the patent laws, what is claimed and desired protected byLetters Patent is set forth in the appended claims.

1. A method for forming strained fins, comprising: forming a staircasefin structure in a substrate with narrow top portions for fins;epitaxially growing raised source and drain regions over the fins; andperforming a pre-amorphization implant to generate defects in thesubstrate to induce strain and to couple the strain into the topportions of the fins.
 2. The method as recited in claim 1, furthercomprising performing a stress memorization technique (SMT) anneal topropagate the strain after the pre-amorphization implant.
 3. The methodas recited in claim 1, further comprising: forming mandrels; formingspacers on the mandrels to form an etch mask for etching trenches in thesubstrate; and etching the trenches in the substrate, using the etchmask, to form the fins.
 4. The method as recited in claim 1, furthercomprising: depositing a high aspect ratio process (HARP) oxide intotrenches etched into the substrate between the fins; and planarizing theHARP oxide to a top of the fins.
 5. The method as recited in claim 1,wherein forming the fins includes: oxidizing the fins above shallowtrench isolation regions; and wet etching the fins above the shallowtrench isolation regions.
 6. The method as recited in claim 1, whereinperforming the pre-amorphization implant includes implanting ion speciesinto the substrate to cause the defects.
 7. The method as recited inclaim 6, wherein the ion species include Ge or Xe.
 8. The method asrecited in claim 1, further comprising protecting a planar region fromprocessing for planar devices.
 9. The method as recited in claim 1,further comprising recessing a dielectric fill into trenches between thefins.
 10. The method as recited in claim 9, wherein the recessing thedielectric fill includes recessing the dielectric fill using a SiCoNietch chemistry.
 11. A method for forming strained fins, comprising:forming a staircase fin structure with narrow top portions of fins;forming gate structures over the top portions of the fins; formingraised source and drain regions on opposite sides of the gate structure;generating defects in the substrate to induce strain and couple thestrain into the top portions of the fins; and performing a stressmemorization technique (SMT) anneal to propagate the strain through thefins from the substrate.
 12. The method as recited in claim 11, furthercomprising etching trenches into the substrate to form finstherebetween; and filling the trenches with the dielectric fill.
 13. Themethod as recited in claim 12, wherein filling the trenches with thedielectric fill includes: depositing a high aspect ratio process (HARP)oxide into the trenches and over the substrate; and planarizing the HARPoxide to a top of the fins.
 14. The method as recited in claim 11,wherein forming the staircase fin structure comprises etching the finsabove a shallow trench isolation regions by: oxidizing the fins abovethe shallow trench isolation regions; and wet etching the fins above theshallow trench isolation regions.
 15. The method as recited in claim 11,wherein generating the defects in the substrate comprises performing apre-amorphization implant including implanting ion species into thesubstrate to cause the defects.
 16. The method as recited in claim 15,wherein the ion species include Ge or Xe.
 17. The method as recited inclaim 11, further comprising protecting a planar region from processingfor planar devices.
 18. The method as recited in claim 17, furthercomprising forming electrostatic discharge devices in the planar region.19. The method as recited in claim 11, further comprising formingshallow trench isolation regions by recessing a dielectric fillincluding recessing the dielectric fill using a SiCoNi etch chemistry.20. The method as recited in claim 19, wherein recessing the dielectricfill includes recessing the dielectric fill using a SiCoNi etchchemistry.